X-Ray Photoemission Study of the Oxidation process at Cleaved (110) Surfaces of GaAs, GaP and InSb
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概要
- 論文の詳細を見る
The room temperature oxidation upon exposure to atmospheric dry O_2 and thermal oxidation in air of some A^I^I^I-B^V compounds have been studied by analyzing XP spectra quantitatively.For GaAs and Gap, evidences of the formation of metastable surface complexes by room temperture oxidation are shown:the values of the ratio of the oxidized A^I^I^I element to the oxidized B^V element is about 2 and 1 for GaAs and GaP, respectibvly.For InSb, it is shown that both elements are oxidized to comparable extents, giving rise to In_2O_3 and probably Sb_2O_3.The rate of oxidation decreases in the order InSb>GaP>GaAs.The behaviors of thermal oxidation of GaAs and GaP are shown to be different.The formation of a GaPO_X network which leads to GaPO_4 at elevated temperatures is discussed.
- 社団法人応用物理学会の論文
- 1978-11-05
著者
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IWASAKI Hiroshi
The Institute of Scient4fic and Industrial Research, Osaka University
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MIZOKAWA Yusuke
Junior College of Engineering, University of Osaka Prefecture
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Nishitani Ryusuke
The Institute Of Scientific And Industrial Research Osaka University
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Nakamura Shogo
The Institute Of Scientific And Industrial Research Osaka University
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Iwasaki Hiroshi
The Institute Of Scientific And Industrial Research Osaka University +junior College Of Engineering
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