Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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SUDOH Koichi
The Institute of Scient4fic and Industrial Research, Osaka University
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IWASAKI Hiroshi
The Institute of Scient4fic and Industrial Research, Osaka University
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Sudoh Koichi
The Institute Of Scient4fic And Industrial Research Osaka University
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Sudoh Koichi
Institute Of Science And Industrial Research Osaka Univ.
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Nakao Motoi
Research Institute For Advanced Science And Technology Osaka Prefecture Univ.
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IZUMI Katsutoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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IIKAWA Hirofumi
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Iikawa Hirofumi
Research Institute For Advanced Science And Technology Osaka Prefecture Univ.
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Izumi Katsutoshi
Research Institute For Advanced Science And Technology Osaka Prefecture Univ.
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Izumi Katsutoshi
Research And Development Bureau N.t.t.
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Sudoh Koichi
The Institute of Science and Industrial Research, Osaka University
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