High Speed C-MOS IC Using Buried SiO_2 Layers Formed by Ion Implantation : A-3: LASER ANNEALING/SOS DEVICES

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Izumi Katsutoshi

  Research And Development Bureau N.t.t.

• Ariyoshi Hisashi

  Musashino Electrical Communication Laboratory N.t.t.

• DOKEN Masanobu

  Musashino Electrical Communication Laboratory, N.T.T.

• Doken Masanobu

  Musashino Electrical Communication Laboratory N.t.t.

関連論文

• Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
• Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing
• Development of Simulation Method for Buried Oxide Formation of SIMOX Structure During Post-Implantation Thermal Annealing
• High Speed C-MOS IC Using Buried SiO_2 Layers Formed by Ion Implantation : A-3: LASER ANNEALING/SOS DEVICES

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