Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-03-01

著者

• YU Guolin

  Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electronic Mechanical Engineering Nagoya University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Watanabe Junji

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Graduate School Of Engineering Osaka University

• UMENO Masayoshi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Umeno Masayoshi

  Department Of Electronic Engineering Chubu University

• YU Guolin

  Research Centerfor Micro-Structure Devices, Nagoya Institute of Technology

• Watanabe J

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• IZUMI Katsutoshi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• NAKASIMA Kenshiro

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Nakasima Kenshiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno M

  Nagoya Inst. Technology

• Izumi Katsutoshi

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Izumi Katsutoshi

  Research And Development Bureau N.t.t.

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