Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(<Special Issue>Heterostructure Microelectronics with TWHM2003)

概要

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We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostrncture FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NF<min>) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NF<min>) operation was possible in a wide drain bias voltage range, i.e from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13 dBm. The excellent characteristics are attributed to three major factors (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.
社団法人電子情報通信学会の論文
2003-10-01