Egawa Takashi | Nagoya Institute Of Technology

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著作論文

12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
Characterization of AlGaN/GaN HFETs on a Si Substrate Grown by MOCVD
Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD
Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

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