12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
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概要
- 論文の詳細を見る
- 2009-06-25
著者
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Egawa Takashi
Nagoya Institute Of Technology
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HOSHI Shinichi
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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ITOH Masanori
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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MARUI Toshiharu
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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OKITA Hideyuki
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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MORINO Yoshiaki
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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TAMAI Isao
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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TODA Fumihiko
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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SEKI Shohei
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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Tamai Isao
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Seki Shohei
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Toda Fumihiko
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Itoh Masanori
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Hoshi Shinichi
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Okita Hideyuki
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Morino Yoshiaki
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Marui Toshiharu
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
関連論文
- 12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
- Characterization of AlGaN/GaN HFETs on a Si Substrate Grown by MOCVD
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD
- Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
- High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
- Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
- Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
- AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD(Session9B: GaN and SiC Device Process Technology)
- Influence of NH_3-Plasma Pretreatment before Si_3N_4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
- Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
- Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
- Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure