Characterization of AlGaN/GaN HFETs on a Si Substrate Grown by MOCVD
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Egawa Takashi
Nagoya Institute Of Technology
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Egawa Takashi
Nagoya Institute Of Technology Research Center For Nano-device And System
関連論文
- 12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
- Characterization of AlGaN/GaN HFETs on a Si Substrate Grown by MOCVD
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD
- Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
- High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
- Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
- Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
- Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
- Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure