Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• KONDO Hiroki

  Nagoya University, Graduate School of Engineering

• Egawa Takashi

  Nagoya Institute Of Technology

• Sekine Makoto

  Nagoya Univ. Nagoya Jpn

• Hori Masaru

  Nagoya Univ. Dept. Of Electric Engineering And Computer Science

• ISHIKAWA KENJI

  Nagoya Juvenile Classification Home

• Amano Hiroshi

  Nagoya University, Nagoya 464-8603, Japan

• Chen Shang

  Nagoya University, Nagoya 464-8603, Japan

• Lu Yi

  Nagoya University, Nagoya 464-8603, Japan

• Kometani Ryosuke

  Nagoya University, Nagoya 464-8603, Japan

• Tokuda Yutaka

  Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

関連論文

• Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes
• 12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
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• Combinatorial Plasma Etching Process
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD
• Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
• High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
• Influence of history of head trauma and epilepsy on delinquents in a juvenile classification home
• Generation Mechanism of Etching Damages on Low-k SiOCH Films and Development of Novel Damage Evaluation Technique
• Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
• Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
• Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
• Luminescence of Acceptors in Mg-Doped GaN
• Field Emissions from Organic Nanorods Armored with Metal Nanoparticles
• Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
• Field Emissions from Organic Nanorods Armored with Metal Nanoparticles
• Chemical reactions during plasma-enhanced atomic layer deposition of SiO

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