Chemical reactions during plasma-enhanced atomic layer deposition of SiO

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2013-12-30

著者

• Lu Yi

  Nagoya University, Nagoya 464-8603, Japan

関連論文

• Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
• Chemical reactions during plasma-enhanced atomic layer deposition of SiO

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