Luminescence of Acceptors in Mg-Doped GaN

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概要

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• Recent photoluminescence (PL) data for Mg-doped GaN at 2 K are discussed, with reference to published theoretical calculations of the electronic level structure. It is concluded that the typical PL peaks at 3.466 eV (acceptor bound exciton ABE1) and the broader 3.27 eV donor--acceptor pair (DAP) PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.

• 2013-08-25

著者

• Li Xing

  Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Avrutin Vitaliy

  Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Bergman Peder

  Linköping University, S-581 83 Linköping, Sweden

• Monemar Bo

  Linköping University, S-581 83 Linköping, Sweden

• Khromov Sergey

  Linköping University, S-581 83 Linköping, Sweden

• Pozina Galia

  Linköping University, S-581 83 Linköping, Sweden

• Paskov Plamen

  Linköping University, S-581 83 Linköping, Sweden

• Bergman Peder

  Linköping University, S-581 83 Linköping, Sweden

• Hemmingsson Carl

  Linköping University, S-581 83 Linköping, Sweden

• Hultman Lars

  Linköping University, S-581 83 Linköping, Sweden

• Amano Hiroshi

  Nagoya University, Nagoya 464-8603, Japan

• Morkoç Hadis

  Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Monemar Bo

  Linköping University, S-581 83 Linköping, Sweden

• Hultman Lars

  Linköping University, S-581 83 Linköping, Sweden

• Pozina Galia

  Linköping University, S-581 83 Linköping, Sweden

• Paskov Plamen

  Linköping University, S-581 83 Linköping, Sweden

• Khromov Sergey

  Linköping University, S-581 83 Linköping, Sweden

• Hemmingsson Carl

  Linköping University, S-581 83 Linköping, Sweden

関連論文

• Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
• Luminescence of Acceptors in Mg-Doped GaN

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