Influence of NH_3-Plasma Pretreatment before Si_3N_4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

概要

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In AlGaN/GaN high electron mobility transistors (HEMTs), Si_3N_4 passivation film brings effective improvements in the current collapse phenomenon, however, the suppression of this phenomenon in a high voltage operation can not be achieved in only the Si_3N_4 deposition process. In order to solve this problem, we have demonstrated an NH_3-plasma surface pretreatment in the chamber of plasma enhanced chemical vapor deposition (PE-CVD) just before Si_3N_4 deposition process. We found that the optimized NH_3-plasma pretreatment could improve the current collapse as compared with only the Si_3N_4 deposition and an excessive pretreatment made it worse adversely in AlGaN/GaN-HEMTs. It was confirmed by Auger electron spectroscopy (AES) analysis that the optimized NH_3-plasma pretreatment decreased the carbon contamination such as hydrocarbon on the AlGaN surface and the excessive pretreatment degraded the stoicheiometric composition of AlGaN surface.
社団法人電子情報通信学会の論文
2006-07-01