MORINO Yoshiaki | Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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概要
- MORINO Yoshiakiの詳細を見る
- 同名の論文著者
- Corporate Research and Development Center, Oki Electric Industry Co., Ltd.の論文著者
関連著者
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HOSHI Shinichi
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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ITOH Masanori
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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MARUI Toshiharu
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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OKITA Hideyuki
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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MORINO Yoshiaki
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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TAMAI Isao
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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TODA Fumihiko
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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SEKI Shohei
Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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Tamai Isao
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Seki Shohei
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Toda Fumihiko
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Itoh Masanori
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Hoshi Shinichi
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Okita Hideyuki
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Morino Yoshiaki
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Marui Toshiharu
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Sano Yoshiaki
Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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Egawa Takashi
Nagoya Institute Of Technology
著作論文
- 12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
- Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
- AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD(Session9B: GaN and SiC Device Process Technology)