Jimbo Takashi | Research Center For Micro-structure Devices Nagoya Institute Of Technology

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
The Deposition of a-C : H Films by Pulsed Laser Ablation
Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
Valence-Band Discontinuity at the AIN/Si Interface
Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation

もっと見る

スポンサーリンク