1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate

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概要

• 論文の詳細を見る

• GaAs-on-Si solar cell will be playing an important role for space applications because Si substrate is low-cost, lightweight and large-area also its radiation tolerant behavior. We have reported the radiation effects of high-energy electron (1 MeV, fluences of 1x10^<13>, 1x10^<14>, 1x10^<15> and 1x10^<16>cm^<-2>) on GaAs layers on Si and GaAs substrates grown by metal organic chemical vapor deposition. After the irradiation, there are no considerable changes for barrier height and ideality factor in the diodes on Si substrate. The number of trap level increases more in case of GaAs/GaAs compared with GaAs/Si. The solar cell parameters such as short -circuit current (Isc), open circuit-voltage (Voc), fill factor (FF) and conversion efficiency are studied under dark and AMO conditions. The degradation rate of Voc and Pmax for GaAs /GaAs solar cell is faster than GaAs/Si solar cell at higher fluences. The slow degradation of GaAs/Si solar cell is due to slow generation of As vacancy in the base layer. These experimental results suggest that GaAs solar cell on Si substrate has higher radiation resistance compared with GaAs solar cell on GaAs substrate under 1 MeV electron irradiation.

• 社団法人電子情報通信学会の論文
• 2004-05-07

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Jimbo T

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• CHANDRASEKARAN Nallathambi

  Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology

• INUZUKA Yousuke

  Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology

• TAGUCHI Hironori

  Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology

• IMAIZUMI Mitsuru

  apan Aerospace Exploration Agency

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• Jimbo Takashi

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Jimbo T

  Nagoya Inst. Technology Nagoya Jpn

• Jimbo T

  Ulvac Inc. Shizuoka Jpn

• Shirata T.

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Imaizumi M

  National Space Development Agency Of Japan

• Taguchi Hironori

  Department Of Enviornmental Technology And Urban Planning Nagoya Institute Of Technologydepartment O

• Taguchi Hironori

  Department Of Applied Physics Faculty Of Science Fukuoka University:(present Address) Kyushu Matsush

• Chandrasekaran Nallathambi

  Department Of Enviornmental Technology And Urban Planning Nagoya Institute Of Technology

• Inuzuka Yousuke

  Department Of Enviornmental Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

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