MOCVD Growth of GaAs_<0.6>P_<0.4> on Si Substrate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-04-20

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki Jpn

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• TAKEYASU Masanari

  Department of Electronic and Computer Engineering, Nagoya Institute of Technology

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Takeyasu Masanari

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

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