Takeyasu Masanari | Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

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概要

• 同名の論文著者
• Department Of Electronic And Computer Engineering Nagoya Institute Of Technologyの論文著者

関連著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki Jpn

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• TAKEYASU Masanari

  Department of Electronic and Computer Engineering, Nagoya Institute of Technology

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Takeyasu Masanari

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

• Sakai S

  Electrotechnical Lab. Ibaraki

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

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著作論文

• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD

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