Photoconductivity Due to Inter-Valence Band Transition in p-Type Germanium
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概要
- 論文の詳細を見る
The second (μ-type) photoconductive effect due to the inter-valence band transition of germanium was observed during the experiment on the photon drag effect. In order to discuss this effect, an analysis was done under the assumption that the heavy and light holes are relaxed by the intra-band and inter-valence band transitions, respectively. The result shows that the photoconductivity depends most strongly on the heavy hole density. The theoretical predictions on the temperature dependence of photoconductivity were in good agreement with the experiment.
- 社団法人日本物理学会の論文
- 1974-02-15
著者
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Engineering Nagoya University
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HATTORI Hajime
Department of Electronic Engineering, Nagoya University
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FUJITANI Osamu
Department of Electronic Engineering, Nagoya University
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Fujitani Osamu
Department Of Electronic Engineering Nagoya University:(present Address) Fujitsu Co. Ltd.
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Fujitani Osamu
Department Of Electronics Faculty Of Engineering Nagoya University
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Hattori Hajime
Department Of Electronic Engineerin Nagoya University
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Hattori Hazime
Department Of Electronics Faculty Of Engineering Nagoya University
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