Anisotropic Properties of Photon Drag Effect in p-type Germanium
スポンサーリンク
概要
- 論文の詳細を見る
A study on the anisotropy of the photon drag effect in p-type germanium confirms that the effect is adequately described by the fourth-rank photon drag tensor. The two independent components S and P of this tensor as functions of temperature and hole concentration have been determined. These values disagree with those obtained by Walker and Tilley [A.C. Walker and D.R. Tilley: J. Phys. C4 (1971) L376]. The experimental results of the longitudinal and transverse photon drag fields are in good agreement with the description of the photon drag tensor. A computer analysis predicts that the maximum longitudinal photon drag effect occurs for a radiation with propagation along [1^^-10] and polarization along [110], while the maximum transverse photon drag voltage appears in [113^^-] when the radiation propagates along [332] with a [1^^-10] polarization. Mechanisms for a transverse photon drag are discussed briefly.
- 社団法人日本物理学会の論文
- 1973-09-05
著者
-
UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
-
JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
-
Jimbo Takashi
Department Of Electronics Nagoya University
-
Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
-
Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
Umeno Masayoshi
Department Of Electronic Engineering Nagoya University
-
HATTORI Hajime
Department of Electronic Engineering, Nagoya University
-
FUJITANI Osamu
Department of Electronic Engineering, Nagoya University
-
MIKI Shichiro
Department of Electronics, Nagoya University
-
Miki Shichiro
Department Of Electronics Faculty Of Engineering Nagoya University
-
Fujitani Osamu
Department Of Electronic Engineering Nagoya University:(present Address) Fujitsu Co. Ltd.
-
Fujitani Osamu
Department Of Electronics Faculty Of Engineering Nagoya University
-
Hattori Hajime
Department Of Electronic Engineerin Nagoya University
-
Hattori Hazime
Department Of Electronics Faculty Of Engineering Nagoya University
関連論文
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Brillouin Scattering in Sodium Nitrite
- Brillouin Scattering in Ca_2Sr(C_2H_5CO_2)_6
- Photoconductivity Due to Inter-Valence Band Transition in p-Type Germanium
- Anisotropic Properties of Photon Drag Effect in p-type Germanium
- High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
- Photon-Drag Effect Due to the Transitions between Light-Hole Band and Split-Off Band in Ge
- Measurement of Subnanosecond Infra-Red Light Pulses by Photon-Drag Effect : Short Pulses of Light
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Measurement of Surface Patterns by Using Interference of Diffraeted Laser Beam
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
- Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
- New Technique to Fabricate Stress-Relieved Reliable Lasers on Si Substrates
- Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
- Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Microwave Conductivity and Relaxation of Excess Phonons in CdS
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- Computer Controlled Precise Positioning for Electromagnetic Linear Motor with Correction of Periodic Error
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
- Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
- Brillouin Scattering of Thermal Phonons in CdS
- Determination of the Absolute Values of Energy Density of Acoustoelectrically Built-Up Phonons in CdS by Brillouin Scattering
- GaAs/AlGaAs Single Quantum Well Optical Switch Fabricated on Si Substrate
- High Efficiency Monolithic GaAs/Si Tandem Solar Cell Grown by Metalorganic Chemical Vapor Deposition
- Al_xGa_As/Si (r=0-0.22) Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
- Effect of Magnetic Field on Density Distribution of Injected Plasma in Semiconductor Rods
- Density Distributions of Injected Plasma along the Length of Semiconductor Rods
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
- Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
- AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment