AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
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概要
- 論文の詳細を見る
We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well (MQW) laser diodes (LD's) fabricated on Si substrates by MOCVD. The lowest threshold current obtained in 7 μm-wide oxide stripe MQW LD's was 170 mA at room temperature (at 293 K). The average threshold current and peak wavelength among the tested 60 chips were 324 mA and 864.3 nm, respectively. The maximum differential quantum efficiency was 14.0%.
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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SHIRAISHI Hiroyuki
Department of Mechanical Engineering, Daido Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Yamada R
Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University
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MATSUI Nobuyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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YAMADA Ryuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Shiraishi H
Mitsubishi Materials Corp. Ibaraki Jpn
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Matsui N
Hyogo Univ.
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Matsui Nobuyuki
Department Of Computer Engineering Himeji Institute Of Technology
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Shiraishi Hiroyuki
Department Of Mechanical Engineering Daido Institute Of Technology
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SHIRAISHI Hiroyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology:Compound Semiconductor Center, Mitsubishi Metal Corporation
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Shiraishi Hiroyuki
Department of Chemical Engineering, Osaka University
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