Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-01-15

著者

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• NAKAMURA Kouichi

  Department of Morphological Brain Science, Graduate School of Medicine, Kyoto University

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Ishikawa Hiroyasu

  Department of Internal Medicine, Anjo Kosei Hospital

• Nishikawa H

  Osaka Univ. Osaka Jpn

• Ishikawa H

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Nakamura K

  Department Of Electrical Engineering School Of Engineering Nagoya University

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Ishikawa Hiroyasu

  Department Of Circulation And Respiration The Resrach Institute Of Environmental Medicine Nagoya Uni

• Umeno M

  Nagoya Inst. Technology

• Nakamura Kouichi

  Department Of Morphological Brain Science Graduate School Of Medicine Kyoto University:core Research

• Nakamura Kouichi

  Department Of Civil And Environmental Engineering Nagaoka University Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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