Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
Liquid phase epitaxy (LPE) of GaAs epilayers grown at 645°C was studied for different Bi compositions in Ga solvent . Mixed solvents such as Ga+Bi were used to improve GaAs epilayer quality. The grown layers were characterized by photoluminescence (PL) and etch pit density (EPD) measurements. The Bi composition was varied from 0 to 100% in Ga. Good quality epilayers were obtained for 100% Bi composition. PL investigations revealed that the epilayer grown using equal atomic percentage of Ga and Bi had good crystallinity, which is comparable with the 100%-Ga-grown epilayer. The PL measurements reveal that carbon inclusion in the epilayer grown using 50% Ga and 50% Bi solution is comparably less than other solvent compositions. The EPD was reduced to more than half order of magnitude when the solvent was changed from Ga to Bi. The EPD results of epilayers grown using mixed solvents are reported for the first time. The EPD of the GaAs epilayer grown using 50% Ga and 50% Bi solution is markedly reduced compared to the other Ga+Bi mixed solvents, and it is almost equal to the EPD of 100%-Bi-grown epilayers.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-15
著者
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Saravanan Shanmugam
Research Center For Micro-structure Devices Nagoya Insititute Of Technology
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Ramasamy Perumal
Crystal Growth Centre Anna University
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AROKIARAJ Jesudoss
Electrical and Computer Engineering, Nagoya Insititute of Technology
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UMENO Masayoshi
Electrical and Computer Engineering, Nagoya Insititute of Technology
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Baskar Krishnan
Electron Devices Division Electrochemical Laborotary
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Jeganathan Kulandaivel
Crystal Growth Centre Anna University
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Arokiaraj Jesudoss
Electrical and Computer Engineering, Nagoya Insititute of Technology, Nagoya 466, Japan
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Saravanan Shanmugam
Research Center for Micro-Structure Devices, Nagoya Insititute of Technology, Nagoya 466, Japan
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Jeganathan Kulandaivel
Crystal Growth Centre, Anna University, Madras 600 025, India
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Soga Tetsuo
Department of Environmental Technology and Urban Planning, Nagoya Insititute of Technology, Nagoya 466, Japan
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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