Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-05-01

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• Saravanan Shanmugam

  Research Center For Micro-structure Devices Nagoya Insititute Of Technology

• Ramasamy Perumal

  Crystal Growth Centre Anna University

• JEGANATHAN Kulandaivel

  Crystal Growth Centre, Anna University

• AROKIARAJ Jesudoss

  Electrical and Computer Engineering, Nagoya Insititute of Technology

• BASKAR Krishnan

  Electron Devices Division, Electrochemical Laborotary

• UMENO Masayoshi

  Electrical and Computer Engineering, Nagoya Insititute of Technology

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