Investigations of a Rapid Thermal Annealed Al_<0.15>Ga_<0.85>As/Si Structure

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概要

• 論文の詳細を見る

• Al_<0.15>Ga_<0.85>As/Si grown by metalorganic chemical vapor deposition (MOCVD) was subjected to rapid thermal annealing (RTA) and investigated by photoluminescence (PL), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and double crystal X-ray diffraction (XRD) measurements. After RTA at 850℃ for 10s the PL intensity increased significantly. Above 900℃, quenching of PL intensity was observed. An emission at 1.515 eV was observed only in 900 and 950℃ annealed samples and is attributed to the formation of a Si-related complex defect. AES and SIMS measurements revealed the diffusion of Si at higher annealing temperatures from the top sunface into the epilayer and this diffusion is accounted for by a gas phase reaction. Double-crystal XRD showed a decreasing full width at half maximum (FWHM) value as the annealing temperature was increased.

• 社団法人応用物理学会の論文
• 1998-05-01

著者

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Saravanan S

  Research Center For Micro-structure Devices Nagoya Insititute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• Saravanan Shanmugam

  Research Center For Micro-structure Devices Nagoya Insititute Of Technology

• AROKIARAJ Jesudoss

  Electrical and Computer Engineering, Nagoya Insititute of Technology

• UMENO Masayoshi

  Electrical and Computer Engineering, Nagoya Insititute of Technology

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Umeno M

  Nagoya Inst. Technology

• Arokiaraj Jesudoss

  Research Center For Microstructure Devices Nagoya Institute Of Technology

• Jinbo Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

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