Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
スポンサーリンク
概要
- 論文の詳細を見る
Compositional variation in initial growth was observed in Liquid Phase Epitaxy (LPE) experiments. It is thought that the cause is the flow of the melt which is induced by the slide of the entire melt from the place where there isn't substrate to the substrate before growth. The phenomenon was simulated with a one dimensional model in InGaP growth with a convection term added to a diffusion-limited model. The velocity of flow in the melt was approximated to Stokes's first problem. It was shown that composition of In in grown solid with the flow is larger than that without the flow. In this paper, InGaP LPE growth is considered and a two dimensional model of the flow is used. For the solute transport, a two dimensional model is also adopted except at the growth interface. A result similar to the one dimensional model was obtained. In the two dimensional model, In composition is greater than that in the case without flow for the greater part of the growth time, but decreases when the flow transports dilute solution. This decrease doesn't appear in the one dimensional model. This phenomenon can be explained by considering the influence of the flow on the mole fraction near the boundary layer.
- 一般社団法人情報処理学会の論文
- 2007-02-15
著者
-
SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
-
JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
-
Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
-
Jimbo Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
-
Soga Tetsuo
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
-
SUSAWA Hiromoto
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
-
TSUJI Toshihiro
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
-
Susawa Hiromoto
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
-
Susawa Hiromoto
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
-
Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Mie University
-
Tsuji Toshihiro
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
関連論文
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Initial Condition and Calculation Method for the Numerical Simulation of LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
- Effects of Al content on Zn_Mg_O Thin Films Deposited by Sol-Gel Spin Coating
- Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
- Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
- High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
- Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
- Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Properties of Pulsed-laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO_2|Dye|CuI Solid-State Photovoltaic Solar Cells
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
- Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
- Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
- Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
- High Efficiency Monolithic GaAs/Si Tandem Solar Cell Grown by Metalorganic Chemical Vapor Deposition
- Al_xGa_As/Si (r=0-0.22) Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
- Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis
- Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
- 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
- Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
- Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract