Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al_<0.26>Ga_<0.74>N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
NGK INSULATORS, LTD.
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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SAKAI Masahiro
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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MIYOSHI Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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ODA Osamu
NGK INSULATORS, LTD.
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Sakai Masahiro
Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Oda Osamu
Rd Center Ngk Insulators Ltd.
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Tanaka Mitsuhiro
Corporate R&d Ngk Insulators Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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