Minority Carrier Properties of GaAs on Si Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Minority carrier properties of 3-μm-thick n-type Gaps on Si with a strained layer superlattice and thermal cycle annealing grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by cathodeluminescence (CL) and time-resolved photoluminescence (TRP). The calculated TRP decay curve is investigated by changing the material parameters (bulk lifetime and surface recombination velocity). The minority carrier lifetime of GaAs on Si has been determined by fitting the experimentally obtained TRP curve to the calculated one. The minority carrier lifetime increases and the dark-spot defect density decreases with increasing number of thermal cycle annealings. The longest minority carrier lifetime of GaAs on Si in this study is 0.38 ns, which is about one order of magnitude smaller than that of GaAs grown on the GaAs substrate under similar conditions. The minority carrier lifetime is increased as the dark-spot defect density is decreased.
- 社団法人応用物理学会の論文
- 1994-03-15
著者
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Soga Tetsuo
Instrument And Analysis Center Nagoya Institute Of Technology
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