Sakai Masahiro | Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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- 同名の論文著者
- Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators Lの論文著者
関連著者
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Sakai Masahiro
Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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SAKAI Masahiro
Research Center for Nano-Device and System, Nagaya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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MIYOSHI Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Oda Osamu
Rd Center Ngk Insulators Ltd.
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Sako Sanshiro
Department Of Physics Faculty Of Education Mie University
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Ohshima Kazunari
Department Of Physics Matsumoto Dental University
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Tanaka Mitsuhiro
Corporate R&d Ngk Insulators Ltd.
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TANAKA Mitsuhiro
NGK INSULATORS, LTD.
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OHSHIMA Kazunari
Department of Physics, Nagoya Unibersity, Matsumoto Dental College
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HAO Maosheng
Research Center for Nano-Device and System, Nagaya Institute of Technology
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TANAKA Mitsuhiro
R&D Division, NGK Insulators Ltd.
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ODA Osamu
R&D Division, NGK Insulators Ltd.
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SAKO Sanshiro
Department of Physics,Faculty of Education,Mie University
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Shibata Tomohiko
Rd Center Ngk Insulators Ltd.
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Hao Maosheng
Research Center For Nano-device And System Nagoya Institute Of Technology
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ODA Osamu
NGK INSULATORS, LTD.
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Sako S
Tohoku Univ. Sendai
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Sako S
Mie Univ. Tsu Jpn
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Ohshima K
Univ. Tsukuba Tsukuba
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ASANO Kenta
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
RD Center, NGK INSULATORS, LTD.
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Asano Kenta
Research Center For Nano-device And System Nagoya Institute Of Technology
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Sakai M
Inst. For Molecular Sci. (ims) Okazaki Jpn
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Hao Maosheng
Research Center for Nano-Device and System, Nagaya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Ishikawa Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Sako Sanshiro
Department of Physics, Faculty of Education, Mie University, Tsu 514-0008
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Ohshima Kazunari
Department of Physics, Matsumoto Dental University, Shiojiri 399-0781
著作論文
- Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
- Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- Magnetic Property of Oxide Passivated Co Nanosized Particles Dispersed in Two Dimensional Plane
- Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
- Magnetic Property of Oxide Passivated Co Nanosized Particles Dispersed in Two Dimensional Plane