Arulkumaran Subramaniam | Research Center For Nano-device And System Nagoya Institute Of Technology
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概要
関連著者
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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SELVARAJ Lawrence
Research center for Nano-Device and System, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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SAKAI Masahiro
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Selvaraj Lawrence
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Shibata Tomohiko
Rd Center Ngk Insulators Ltd.
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electronic Engineering Chubu University
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Zhao Guang-yuan
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Sakai Masahiro
Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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Oda Osamu
Rd Center Ngk Insulators Ltd.
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ZHAO Guang-Yuan
Venture Business Laboratory, Nagoya Institute of Technology
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趙 廣元
名古屋工業大学・ベンチャー・ビジネス・ラボラトリー
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Nakaji Masaharu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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ASANO Kenta
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
RD Center, NGK INSULATORS, LTD.
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ARULKUMARAN Subramanian
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Asano Kenta
Research Center For Nano-device And System Nagoya Institute Of Technology
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Umeno M
Nagoya Inst. Technology
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Tanaka Mitsuhiro
Corporate R&d Ngk Insulators Ltd.
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Ishikawa Hiroyasu
Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan
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Arulkumaran Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan
著作論文
- On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
- Studies on the Influences of $i$-GaN, $n$-GaN, $ p$-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
- Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors