Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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SELVARAJ S.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
関連論文
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- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
- Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
- Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
- AlGaN UV-B Photodetectors on AlN/sapphire template
- Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
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- Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
- A comparison on the Electrical Characteristics of SiO_2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal-Oxide/Insulator-Semiconductor High-Electron Mobility-Transistors
- Studies of Electron Beam Evaporated SiO_2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
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- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
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- Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
- Valence-Band Discontinuity at the AIN/Si Interface
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- High-Temperature Behaviors of GaN Schottky Barrier Diode
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- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
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- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
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- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
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- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
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- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
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- DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
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