Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy

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概要

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• In_xAl_1-xN lattice-matched to GaN with recording crystal quality have been grown on AlN/sapphire template by metal organic chemical vapor deposition. The width at half maximums (FWHMs) of X-ray diffraction (XRD) $\omega$-rocking curves are as low as 100 arcsec for (0002) reflection and 248 arcsec for $(10\bar{1}2)$ reflection, respectively. Deep level transient spectroscopy (DLTS) technique has been employed to investigate the deep traps in InAlN. Three deep traps were observed with activation energies of $E_{1} = 0.351 \pm 0.018$, $E_{2} = 0.404 \pm 0.027$, and $E_{3} = 0.487 \pm 0.026$ eV, respectively. The capture kinetic behaviors of $E_{1}$ and $E_{3}$ were investigated, and it is believed that $E_{1}$ is associated with point defects while $E_{3}$ is related to dislocations.

• 2011-08-25

著者

• 酒井 佑輔

  名古屋工業大学極微デバイス機能システム研究センター

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Sakai Yusuke

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Ichikawa Junki

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Chen Zhitao

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Fujita Kazuhisa

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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