Fujita Kazuhisa | Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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概要
- Fujita Kazuhisaの詳細を見る
- 同名の論文著者
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japanの論文著者
関連著者
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Fujita Kazuhisa
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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酒井 佑輔
名古屋工業大学極微デバイス機能システム研究センター
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Sakai Yusuke
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Ichikawa Junki
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Chen Zhitao
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Sakai Yusuke
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Egawa Takashi
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Aryal Hare
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Banno Kazuya
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
著作論文
- Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
- Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition