Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Fujita Kazuhisa

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Aryal Hare

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Banno Kazuya

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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