Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate

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概要

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• A thermally annealed Ni/Pt/Au metal structure was employed as the gate contacts of AlGaN/GaN high electron mobility transistors (HEMTs), and their DC and RF performances were investigated. This gate structure markedly improved the Schottky characteristics such as the Schottky barrier height and leakage current. Regarding the DC characteristics, the maximum drain current and off-state breakdown voltage were increased from 0.78 A/mm ($V_{\text{g}}=1$ V) to 0.90 A/mm ($V_{\text{g}}=3$ V) due to the improved applicability of the gate voltage and from 108 V to 178 V, respectively, by annealing the gate metals. In addition, a reduction of the transconductance was not observed. Furthermore, even after the deposition of SiNx passivation film, the off-state breakdown voltage remained at a relatively high value of 120 V. Regarding the RF characteristics, the cut-off frequency and maximum oscillation frequency were also improved from 10.3 GHz to 13.5 GHz and from 27.5 GHz to 35.1 GHz, respectively, by annealing the gate metals whose gate length was 1 μm.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Miura Naruhisa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Ishikawa Hiroyasu

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Ozeki Tatsuo

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• INOUE Akira

  Microwave Device Development Department, Mitsubishi Electric Corporation

• ISHIKAWA Takahide

  Microwave Device Development Department, Mitsubishi Electric Corporation

• MATSUDA Yoshio

  Microwave Device Development Department, Mitsubishi Electric Corporation

• Nanjo Takuma

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Nakatsuka Shigenori

  Microwave Device Development Department Mitsubishi Electric Corporation

• Suita Muneyoshi

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Abe Yuji

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Abe Yuji

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Nakatsuka Shigenori

  Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

• OISHI Toshiyuki

  Advanced Technology R & D Center, Mitsubishi Electric Corporation

• Oishi Toshiyuki

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Suita Muneyoshi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Miura Naruhisa

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Ozeki Tatsuo

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Nanjo Takuma

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Inoue Akira

  Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

• Matsuda Yoshio

  Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

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