Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal--Oxide--Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V
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概要
- 論文の詳細を見る
We have investigated the effect of n-type doping into the junction field-effect transistor region (JFET doping) on the static characteristics of 3300-V-class 4H-SiC metal--oxide--semiconductor field-effect transistors (MOSFETs). The JFET doping technique is significantly effective in reducing the on-resistance of SiC MOSFETs without degradation of the blocking characteristics when the MOS cells are properly designed. The JFET doping reduces the temperature coefficient of the resistance in the JFET region, leading to lower on-resistance of the SiC MOSFETs at high temperatures.
- 2013-04-25
著者
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Imaizumi Masayuki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Sumitani Hiroaki
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Hino Shiro
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Hamada Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Kawakami Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oomori Tatsuo
R&D Partnership for Future Power Electronics Technology (FUPET), Minato, Tokyo 105-0001, Japan
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Kawakami Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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