A Simplified Dopant Pile-Up Model for Process Simulators(Regular Section)

スポンサーリンク

概要

• 論文の詳細を見る

• This paper describes an effective model which reproduces the dependence on the source/drain (S/D) process of the reverse short channel effect (RSCE) of the MOSFET threshold voltage (V_th). It is useful for local modeling which is effective within the limited process conditions. The proposed model is based on the physics where the key factor of RSCE is the dopant pile-up in the Si/SiO_2 interface. The purpose of the model is for TCAD to be put to actual use as a quick solution tool. The calculation cost is much lower than a pair diffusion model, because the model is implemented in a conventional process simulator that solves one equation for each impurity. The capability of the simplified model is investigated for the dependence of various process conditions on the RSCE. Using our model, we also report the application of both the actual n-channel and p-channel MOSFETs.

• 社団法人電子情報通信学会の論文
• 2002-12-01

著者

• MIURA Noboru

  Department of Electronics and Bioinformatics, Science and Technology, Meiji University

• Miura N

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• Fukuda K

  Oki Electric Industry Co. Ltd.

• Miura Noriyuki

  Oki Electric Industry Co. Ltd.

• Miura N

  Department Of Electronics And Bioinformatics Science And Technology Meiji University

• Miura Naruhisa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Mochizuki Mitsuru

  Oki Electric Industry Co. Ltd.

• HAYASHI Hirokazu

  OKI Electric Industry Co., Ltd.

• KOMATSUBARA Hirotaka

  OKI Electric Industry Co., Ltd.

• MOCHIZUKI Marie

  OKI Electric Industry Co., Ltd.

• FUKUDA Koichi

  OKI Electric Industry Co., Ltd.

• Hayashi H

  Oki Electric Industry Co. Ltd.

• Komatsubara Hirotaka

  Oki Electric Industry Co. Ltd.

• Hayashi Hitoshi

  Ntt Corp. Yokosuka‐shi Jpn

関連論文

• SPR免疫センサとマイクロチャネルセルを用いた環境ホルモン類の多成分同時検出システムの開発
• Preparation of Platinum Palladium Monoxide Pt_Pd_xO Thin Films
• 20pTH-8 変調ドープ n-CdTe/(Cd, Mg, Mn)Te 量子井戸における磁気ルミネッセンスの微細構造
• 30pYH-9 変調ドープ n-CdTe/(Cd, Mg, Mn) Te 量子井戸におけるν∿1 近傍の PL スペクトル異常
• 20pTH-7 GaAs/AlAs 隣接閉じ込め構造からの励起子磁気発光 II
• 20pTH-6 半導体ナノ構造における電子・正孔空間分離型励起子からの磁気発光ダイナミクス
• 30pZB-12 高周波電気伝導測定法を用いた超強磁場中グラファイトの電子状態 III
• WO_3 ゲート FET デバイスの NO_2 検知特性
• Li_2CO_3-BaCO_3 補助相を接合した NASICON ベースの室温作動型 CO_2 センサ
• 糖尿病診断を目指した呼気中アセトン検出用薄膜型酸化物半導体ガスセンサ
• 抗原抗体反応を利用したSPR薬物センサ
• OME2000-94 抗原抗体反応を利用したSPR薬物センサ
• 金属-空気電池用酸素電極触媒としてのマンガン系ペロブスカイト型酸化物
• 化学センサ研究会の活動
• High Temperature PTC Thermistor Using Ba Cobaltite
• Influences of A-site Partial Substitution for BaCo_Fe_O_3 Oxide on Perovskite Structure and Oxygen Permeability
• 20pWF-2 100T級超強磁場における擬二次元導体の輸送測定
• 実験室 ストレインゲージ法によるパルス強磁場中での磁歪測定
• 19pYJ-11 n-ZnOのサイクロトロン共鳴とポーラロン効果
• 19aYJ-10 GaP/AlPヘテロ構造からの励起子発光と磁場誘起キャリア局在
• ペロブスカイト型酸化物La_A_xMnO_3 (A=Na, K, Rb)の濃アルカリ水溶液中での電気化学的酸素還元特性
• 19pYJ-13 PbSe/PbEuTe量子ドット中0次元電子のサイクロトロン共鳴
• 17aYH-5 In_Mn_xAsにおける正孔のサイクロトロン共鳴
• ガスセンシングデバイスへの応用 (特集 イオン伝導性固体とその応用)
• Na〔+〕導電体を用いた電流検出型NO2センサのクロノポテンシオメトリー法による検知極反応解析
• 27aZC-11 (411)Aおよび(100)基板上 GaAs/AlGaAs量子井戸からの磁気発光スペクトルII(量子井戸・超格子,領域4(半導体, メゾスコピック系・局在))
• 19aYJ-9 強磁場・高圧下におけるGaAs/AlAs系ヘテロ構造からの励起子発光スペクトル
• 電位走査電析法により作製したナノ構造を有するCo-Ni酸化物のスーパーキャパシタ特性
• 環境保全用を中心とする新しい高性能ガスセンサの研究開発
• ー特集号の企画にあたってー
• 23aWK-1 絶縁体混晶スピングラスFe_xMn_Ti_O3における磁化過程の特異な磁場掃引速度依存性(23aWK スピングラス,領域3(磁性,磁気共鳴))
• 14pYC-8 GaAs/AlGaAs 量子井戸からの磁気発光スペクトル (411) A および (100) 基板上(量子井戸・超格子 : 輸送現象・光学応答, 領域 4)
• 2001年度サー・マーティン・ウッド賞
• 二酸化スズ表面の一酸化窒素吸着種のキャラクタリゼ-ションと制御
• Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
• ポータブル表面プラズモン共鳴免疫センサを用いたサブ ppb レベルの2-ヒドロキシビフェニルの検出
• SPR免疫センサとマイクロチャネルセルを用いた環境ホルモン関連物質の2成分同時検出システム
• 車載用および大気監視用 NOx センサ
• 電界効果トランジスタ NO2センサにおける亜硝酸ナトリウム補助相への第2成分添加効果
• パイロクロア型酸化物薄膜を用いたNOxセンサ
• ストロンチウム-コバルト系酸化物の酸素透過能と相移転.Bサイト置換効果
• Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• 表面修飾剤による酸化インジウム系素子のCO検知特性の改善
• 牛肉の鮮度評価を目指した酸化物半導体ガスセンサの開発
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
• Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn_Cd_xS Thin Film Electroluminescent Devices
• Several Blue-Emitting Thin-Film Electroluminescent Devices
• Eleetroluminescence of ZnF_2 Thin-Films Doped with Rare-Earth Ions
• Strong Ultraviolet-Emitting ZnF_2:Gd Thin Film Electroluminescent Device
• 酸化物電極を用いた混成電位式NOxセンサの検知性能
• 酸化触媒電極を付与した混成電位式 NO_X センサの検知性能
• 電界効果トランジスタ (FET)型NOセンサに関する研究
• Na2CO3系補助相を接合した固体電解質CO2センサのセンサ特性と界面構造
• SPR免疫センサによるメタンフェタミン(覚醒剤)の高感度検出とその抗原抗体反応解析
• YMnO3誘電体薄膜の作製とその特性
• 炭化水素を検知対象とする安定化ジルコニアと酸化物電極を組み合わせた混成電位型センサ (Proceedings of the 29th Chemical Sensor Symposium,September 13〜14,1999〔和文〕)
• ガス濃縮法を組み込んだセンサシステムの検討
• ナノサイズ酸化スズ水熱処理ゾルから作製した薄膜のセンサ特性に及ぼす粒子径および膜厚の影響
• 酸化ビスマス薄膜のエレクトロクロミック特性と表面構造--アルカリおよびアルカリ土類添加による消色特性の改善
• 酸化ビスマスを用いた半導体NOセンサ
• Gas Sensing Properties of Indium Oxide Thin Film on Silicon Substrate Prepared by Spin-Coating Method
• MgO添加量を変えた安定化ジルコニアディスクを用いた固体電気化学センサのSO_2応答特性
• Fabrication of New Planar-Type Microsensor Attached with Spin-Coated Thin Film of Tin Dioxide and Its Thermal and CO Sensing Characteristics (特集 環境ガスセンサ)
• 酸化物半導体ガスセンサ-と食品品質管理
• Detection of Morphine in ppb Range by Using SPR(Surface-Plasmon-Resonance)Immunosensor
• Room Temperature Nb-Based Single-Electron Transistors
• Room Temperature Nb-Based Single-Electron Transistors
• Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
• New Red-Emitting CaY_2S_4:Eu Thin-Film Electroluminescent Devices
• Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering
• A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy(the IEEE International Conference on SISPAD '02)
• TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET(the IEEE International Conference on SISPAD '02)
• A Simplified Dopant Pile-Up Model for Process Simulators(Regular Section)
• Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering
• A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
• Atomic Composition and Structural Properties of Blue Emitting BaAl_2S_4:Eu Electroluminescent Thin Films
• Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroiluminescent Devices Prepared by Two Targets pulse Electron Beam Evaporation(Special Issue on Electronic Displays)
• Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process (Special lssue on SISPAD'99)
• High-Luminance Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroluminescent Devices
• Transient Behavior in ZnS:TbF_x Thin-Film Electroluminescent Devices Excited by Very Short Pulse
• 121 THE FOLLOW-UP STUDY OF SIMPLE OBESE CHILDREN REFERRlNG TO ACANTHOSIS NlGRICANS AND TYPE 2 DIABETES MELLITUS
• Broad Band Emission Behaviors an ZnS Thin Film Electroluminescent Devices : Optical Properties of Condensed Matter
• Inverse Modeling and Its Application to MOSFET Channel Profile Extraction (Special Issue on TCAD for Semiconductor Industries)
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
• Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
• Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
• A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
• Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
• Single-Electron Tunneling through Amorphous Carbon Dots Array
• Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique
• Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
• Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
• Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
• Electronic Interaction between Metal Additives and Tin Dioxide in Tin Dioxide-Based Gas Sensors : Surfaces, Interfaces and Films
• 4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate

もっと見る 閉じる

スポンサーリンク