Inverse Modeling and Its Application to MOSFET Channel Profile Extraction (Special Issue on TCAD for Semiconductor Industries)
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概要
- 論文の詳細を見る
We propose a new inverse modeling method to extract 2D channel dopant profile in an MOSFET. The profile is extracted from threshold voltage (Vth) of MOSFETs with a series of gate lengths. The uniqueness of the extracted channel and drain profile is confirmed throtugh test simulations. The extracted profile of actual 0.1 μm nMOSFETs explains reverse short channel effects (RSCE) of threshold voltage dependent on gate length including substrate bias dependence.
- 社団法人電子情報通信学会の論文
- 1999-06-25
著者
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Fukuda K
Oki Electric Industry Co. Ltd.
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HAYASHI Hirokazu
OKI Electric Industry Co., Ltd.
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FUKUDA Koichi
OKI Electric Industry Co., Ltd.
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Nishi Kenji
OKI Electric Industry Co., Ltd.
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Nishi K
Sumitomo Electric Hightechs Co. Ltd. Itami‐shi Jpn
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Matsuhashi Hideaki
Oki Electric Industry Co. Ltd.
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Hayashi H
Oki Electric Industry Co. Ltd.
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Nishi Kenji
Oki Electric Industry Co. Ltd.
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Hayashi Hitoshi
Ntt Corp. Yokosuka‐shi Jpn
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