TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET(<Special Issue>the IEEE International Conference on SISPAD '02)
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概要
- 論文の詳細を見る
In this paper, we propose a TCAD driven hot carrier reduction methodology of 3.3 V I/O pMOSFETs design. The hot carrier reliability of surface channel I/O pMOSFET having drain structure in common with core devices has a critical issue. It is substantially important for the high-reliability devices to reduce both drain avalanche and channel hot hole components. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and drive current (I_<ON>), SDE/HALO of both core and I/O transistors can be totally optimized for reduction of process-steps and/or photo-masks.
- 社団法人電子情報通信学会の論文
- 2003-03-01
著者
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MIURA Noboru
Department of Electronics and Bioinformatics, Science and Technology, Meiji University
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Fukuda K
Oki Electric Industry Co. Ltd.
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Miura Noriyuki
Oki Electric Industry Co. Ltd.
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Miura N
Department Of Electronics And Bioinformatics Science And Technology Meiji University
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Mochizuki Mitsuru
Oki Electric Industry Co. Ltd.
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HAYASHI Hirokazu
OKI Electric Industry Co., Ltd.
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KOMATSUBARA Hirotaka
OKI Electric Industry Co., Ltd.
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MOCHIZUKI Marie
OKI Electric Industry Co., Ltd.
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FUKUDA Koichi
OKI Electric Industry Co., Ltd.
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Hayashi H
Oki Electric Industry Co. Ltd.
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Komatsubara Hirotaka
Oki Electric Industry Co. Ltd.
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Hayashi Hitoshi
Ntt Corp. Yokosuka‐shi Jpn
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