Hayashi Hitoshi | Ntt Corp. Yokosuka‐shi Jpn

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概要

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著作論文

A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy(the IEEE International Conference on SISPAD '02)
TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET(the IEEE International Conference on SISPAD '02)
A Simplified Dopant Pile-Up Model for Process Simulators(Regular Section)
A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process (Special lssue on SISPAD'99)
Inverse Modeling and Its Application to MOSFET Channel Profile Extraction (Special Issue on TCAD for Semiconductor Industries)
Radial Open Stub and Its Application to a Simple Design of a Four-element Planar Butler Matrix
Design of Broad-Band Four-Way Power Divider with 45-Degree Phase Differences between Output Ports(Special Issue on Signals, Systems and Electronics Technology)
A Miniaturized In-Phase Power Divider with a DC Block Function(Microwaves, Millimeter-Waves)
Miniaturized Broadband Lumped-Element In-Phase Power Dividers(Analog Circuits and Related SoC Integration Technologies)
An Active Terminal Circuit and Its Application to a Distributed Amplifier(Analog Circuits and Related SoC Integration Technologies)
Improved Broadband Operation of Rat-race Hybrid and Balanced Active Doubler: Analysis and Demonstration
Improved Broadband Operation of Rat-race Hybrid and Balanced Active Doubler : Analysis and Demonstration
A 0.9-2.6 GHz Broadband RF Front-End Chip-Set with a Direct Conversion Architecture(Special Issue on Software Defined Radio Technology and Its Applications)

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