A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
スポンサーリンク
概要
- 論文の詳細を見る
We propose an effective model that can reproduce the reverse short channel effect(RSCE)of the threshold voltage(V_<th>)of MOSFETs using a conventional process simulator that solves one equation for each impurity. The proposed model is developed for local modeling which is effective within the limited process conditions. The proposed model involves the physics in which RSCE is due to the pile up of channel dopant at the Si/SiO_2 interface. We also report the application to actual device design using our model. The calculation cost is much lower than for a pair diffusion model, and device design in an acceptable turn around time is possible.
- 社団法人電子情報通信学会の論文
- 2001-09-01
著者
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MIURA Noboru
Department of Electronics and Bioinformatics, Science and Technology, Meiji University
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Fukuda K
Oki Electric Industry Co. Ltd.
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Miura Noriyuki
Oki Electric Industry Co. Ltd.
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Miura N
Department Of Electronics And Bioinformatics Science And Technology Meiji University
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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HAYASHI Hirokazu
OKI Electric Industry Co., Ltd.
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KOMATSUBARA Hirotaka
OKI Electric Industry Co., Ltd.
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FUKUDA Koichi
OKI Electric Industry Co., Ltd.
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Hayashi H
Oki Electric Industry Co. Ltd.
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Komatsubara Hirotaka
Oki Electric Industry Co. Ltd.
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Hayashi Hitoshi
Ntt Corp. Yokosuka‐shi Jpn
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