Fukuda K | Oki Electric Industry Co. Ltd.

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概要

• FUKUDA Koichiの詳細を見る
• 同名の論文著者
• Oki Electric Industry Co. Ltd.の論文著者

関連著者

• Fukuda K

  Oki Electric Industry Co. Ltd.

• HAYASHI Hirokazu

  OKI Electric Industry Co., Ltd.

• FUKUDA Koichi

  OKI Electric Industry Co., Ltd.

• Hayashi H

  Oki Electric Industry Co. Ltd.

• Hayashi Hitoshi

  Ntt Corp. Yokosuka‐shi Jpn

• MIURA Noboru

  Department of Electronics and Bioinformatics, Science and Technology, Meiji University

• Miura N

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• Miura Noriyuki

  Oki Electric Industry Co. Ltd.

• Miura N

  Department Of Electronics And Bioinformatics Science And Technology Meiji University

• Miura Naruhisa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• KOMATSUBARA Hirotaka

  OKI Electric Industry Co., Ltd.

• Komatsubara Hirotaka

  Oki Electric Industry Co. Ltd.

• Mochizuki Mitsuru

  Oki Electric Industry Co. Ltd.

• MOCHIZUKI Marie

  OKI Electric Industry Co., Ltd.

• Nishi Kenji

  OKI Electric Industry Co., Ltd.

• Nishi K

  Sumitomo Electric Hightechs Co. Ltd. Itami‐shi Jpn

• Nishi Kenji

  Oki Electric Industry Co. Ltd.

• Matsuhashi Hideaki

  Oki Electric Industry Co. Ltd.

• Fukuda Koichi

  VLSI Research and Development Center, OKI Electric Industry Company, Ltd.

• Nishi Kenji

  VLSI Research and Development Center, OKI Electric Industry Company, Ltd.

• Nishi Kenji

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Nishi Kenji

  Vlsi Research And Development Center Oki Electric Industry Company Ltd.

• FUKUDA Koichi

  VLSI R & D Center, Oki Electric Industry Co., Ltd.,

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著作論文

• A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy(the IEEE International Conference on SISPAD '02)
• TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET(the IEEE International Conference on SISPAD '02)
• A Simplified Dopant Pile-Up Model for Process Simulators(Regular Section)
• A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
• Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process (Special lssue on SISPAD'99)
• Inverse Modeling and Its Application to MOSFET Channel Profile Extraction (Special Issue on TCAD for Semiconductor Industries)
• A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account

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