Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
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概要
- 論文の詳細を見る
Deposition of a carbon microfilm was performed by an electron-beam-induced deposition technique using scanning electron microscopy, and its electrical as well as optical properties were characterized. Peaks originated from a diamond-like carbon (DLC) were observed by Raman scattering spectroscopy and it was indicated that the deposited film consisted of amorphous carbon (a-C). Its electrical characteristics were studied using metal-insulator-metal diodes. The I-V curve of the diode showed nonlinear characteristics, and a dielectric constant was estimated at about 5. Furthermore, a tungsten carbide (WCx) film was grown by an ion-beam-induced deposition technique, and it was used in a WCx/a-C/WCx stacked junction of submicron size. It could be estimated from the dependence of the thermionic emission current on temperatures that an intrinsic barrier height in this WCx/a-C system was approximately 0.19 eV.
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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山田 晃
東京農工大学生物システム応用科学府
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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MIURA Naruhisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Teclnohogy
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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