Room Temperature Nb-Based Single-Electron Transistors

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• KONAGAI Makoto

  Tokyo Institute of Technology

• Miura N

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• Matsumoto K

  Nippon Sanso Corp. Ibaraki Jpn

• Matsumoto K

  Electrotechnical Lab. Ibaraki‐kenn Jpn

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (etl)

• Matsumoto Kazuhiko

  Advanced Industrial Science And Technology:tsukuba University:crest

• SHIRAKASHI Jun-ichi

  Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology

• Konagai Makoto

  Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology

• MIURA Naruhisa

  Tokyo Institute of Technology

• Miura Naruhisa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (elt)

• Matsumoto Kazuhisa

  Sumitomo Electric Industries Ltd.

• Konagai Makoto

  Tokyo Inst. Technol. Tokyo Jpn

• Konagai M

  Department Of Physical Electronics Tokyo Institute Of Technology

• Matsumoto K

  Advanced Industrial Science And Technology:tsukuba University:crest

• Miura N

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Matsumoto Koh

  Tsukuba Laboratories Nippon Sanso Corporation

• Shirakashi Junichi

  Electrotechnical Laboratory

• Shirakashi Jun-ichi

  Electrotechnical Laboratory

• Matsumoto K

  Electrotechnical Laboratory

• Matsumoto Kazuhiko

  Electrotechnical Laboratory

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