Matsumoto Kazuhisa | Sumitomo Electric Industries Ltd.

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著作論文

Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
V-Shaped Gate High Electron Mobility Transistor (VHEMT)
Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Room Temperature Nb-Based Single-Electron Transistors
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Room Temperature Nb-Based Single-Electron Transistors
Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
Surface Observation and Modification of Si Substrate in Solutions
Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Single Electron Memory at Romm Temperature: Experiment and Simulation
Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
Stacked Optical Disk Drive for Multimedia Files : Drive Technology
Stacked Optical Disk Drive for Multimedia Files
Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
Computer-Controlled Mapping of Photoluminescence Intensities
Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
Characterization of Polyvinylchloride by Means of Sound Velocity and Longitudinal Modulus Measurements
GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices

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