1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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Matsumoto K
Nippon Sanso Corp. Ibaraki Jpn
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
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UBUKATA Akinori
Tsukuba Laboratories, Nippon Sanso Corporation
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MATSUMOTO Koh
Tsukuba Laboratories, Nippon Sanso Corporation
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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Matsumoto K
Advanced Industrial Science And Technology:tsukuba University:crest
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DONG Jie
Beijing Photoron Optoelectronics Co., Ltd.
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DONG Jie
Tsukuba Laboratories, Nippon Sanso Co.
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Dong J
Beijing Photoron Optoelectronics Co. Ltd.
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Matsumoto Koh
Tsukuba Laboratories Nippon Sanso Corp.
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Matsumoto Koh
Tsukuba Laboratories Nippon Sanso Corporation
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Ubukata A
Tsukuba Laboratories Nippon Sanso Corporation
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Ubukata Akinori
Tsukuba Laboratories Nippon Sanso Corp.
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Matsumoto K
Electrotechnical Laboratory
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