Hydrostatic Pressure Dependence of Eg-100 meV Photoluminescence Emissions in n-Type AlGaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Uchida K
Hitachi Ltd. Tokyo Jpn
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Uchida Kazuo
Department Of Communications And Systems The University Of Electro-communications
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Yu Peter
Department Of Physics And Materials Science City University Of Hong Kong
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Yu Peter
Department Of Physics University Of California Berkeley And Center For Advanced Materials Lawrence B
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Matsumoto Koh
Tsukuba Laboratories Nippon Sanso Corp.
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Matsumoto Koh
Tsukuba Laboratory Nippon Sanso Co.
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Wong Hoover
Department Of Physics University Of California Berkeley And Center For Advanced Materials Lawrence B
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SEGUY Patrice
Department of Physics, University of California, Berkeley and Center for Advanced Materials, Lawrenc
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SOUZA Particia
Department of Materials Science, University of California
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WEBER Eicke
Department of Materials Science, University of California
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Yu Peter
Department Of Applied Biology & Chemical Technology Hong Kong Polytechnic University
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Weber Eicke
Department Of Materials Science University Of California
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Seguy Patrice
Department Of Physics University Of California Berkeley And Center For Advanced Materials Lawrence B
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Souza Particia
Department Of Materials Science University Of California
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- Probing the DX Center in GaAs and Related Alloys by Capacitance Transient Measurements under Stress
- Pressure Dependence of Time-Pesolved Photoluminescence in Ordered Ga_In_P
- High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface
- Hydrostatic Pressure Dependence of Eg-100 meV Photoluminescence Emissions in n-Type AlGaAs
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