Effect of New Point-of-Use Purifier for AsH_3 and PH_3

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概要

• 論文の詳細を見る

• We have developed a novel catalyst to selectively reduce the amount of residual SiH_4 and H_2S as well as H_2O in AsH_3 and PH_3 gases. The effectiveness of the point-of-use purifier in growing high-purity GaAs and InP by metalorganic vapor phase epitaxy (MOVPE) is presented. It is demonstrated that undoped InP with total carrier concentration as low as 1.0×10^<14> cm^<-3> and mobility over 200,000 cm^2/V・s at 77 K can be obtained reproducibly, using purified PH_3 which was intentionally doped with 740 ppb H_2S. High-resistivity p-type GaAs was reproducibly obtained through purification of AsH_3 which was intentionally doped with 15 ppb SiH_4. PL intensity of Al_<0.25>Ga_<0.75>As at 77 K was increased two fold as a result of point-of-use purification.

• 社団法人応用物理学会の論文
• 1993-06-01

著者

• Matsumoto Koh

  Tsukuba Laboratories Nippon Sanso Corp.

• Takahashi Y

  Okayama Univ. Okayama Jpn

• Ubukata Akinori

  Tsukuba Laboratories Nippon Sanso Corp.

• Takahashi Yasuhiro

  Fine-gas Laboratory Nippon Sanso Corp.

• Ikeda Takuya

  Fine-gas Laboratory Nippon Sanso Corp.

• HASEGAWA Hideharu

  Fine-Gas Laboratory, Nippon Sanso Corp.

• YAMAGUCHI Akira

  SED Department, Nippon Sanso Corp.

• Hasegawa Hideharu

  Fine-gas Laboratory Nippon Sanso Corp.

• Yamaguchi Akira

  Sed Department Nippon Sanso Corp.

• Ikeda Toshio

  Department of Applied Chemistry, The University of Tokyo

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