Stacked Optical Disk Drive for Multimedia Files : Drive Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-03-31

著者

• Ichikawa Kouji

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Matsumoto K

  Electrotechnical Lab. Ibaraki‐kenn Jpn

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (etl)

• Matsumoto Kazuhiko

  Advanced Industrial Science And Technology:tsukuba University:crest

• NIIHARA Toshio

  Central Research Laboratory, Hitachi Ltd.

• Niihara Toshio

  Central Research Laboratory Hitachi Ltd.

• Matsumoto Kazuhisa

  Sumitomo Electric Industries Ltd.

• Mita S

  Data Storage & Retrieval Systems Division Hitachi Ltd.

• Mita S

  Toyota Technological Institute

• Nakao T

  Central Research Laboratory Hitachi Ltd.

• Nakamura S

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Nihei H

  Univ. Tokyo Tokyo Jpn

• SUKEDA Hirofumi

  Central Research Laboratory, Hitachi, Ltd.

• Sukeda H

  Central Research Laboratory Hitachi Ltd.

• Saga H

  Hitachi Ltd. Tokyo Jpn

• Sukeda Hirofumi

  Central Research Laboratory Hitachi Ltd.

• NAKAMURA Shigeru

  Central Research Laboratory, Hitachi Ltd.

• SEYA Eiichi

  Central Research Laboratory, Hitachi Ltd.

• MATSUMOTO Kiyoshi

  Central Research Laboratory, Hitachi Ltd.

• NIHEI Hideki

  Hitachi Research Laboratory, Hitachi Ltd

• MITA Seiichi

  Central Research Laboratory, Hitachi Ltd.

• Seya E

  Central Research Laboratory Hitachi Ltd.

• Matsumoto Kiyoshi

  Central Research Laboratory Hitachi Ltd.

• Nakamura Shigeru

  Central Research Laboratory Hitachi Ltd.

関連論文

• Raman Scattering Studies of CuInS_2 Films Grown by RF Ion Plating
• Low-Temperature Deposition of CuIn(S_xSe_)_2 Thin Films by Ionized Cluster Beam Technique
• Growth and Characterization of CuInS_2 Films grown by Rf Ion-Plating
• GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
• 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
• High-Power Pure Blue InGaN Laser Diodes
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
• Effect of Pulse Duration on Ablation Characteristics of Tetrafluoroethylene-hexafluoropropylene Copolymer Film Using Ti:sapphire Laser
• High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
• InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Cd-Doped InGaN Films Grown on GaN Films
• Si-Doped InGaN Films Grown on GaN Films
• P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
• Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
• Hole Compensation Mechanism of P-Type GaN Films
• Hall Effect Studies on Ar and Xe Sputtered Pt/Co Multilayer Films : Media
• Hall Effect Studies on Ar and Xe Sputtered Pt/Co Multilayer Films
• Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
• Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
• Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
• Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
• V-Shaped Gate High Electron Mobility Transistor (VHEMT)
• Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
• Silicidation Reaction and Stress in Ti/Si
• Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
• Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
• Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
• Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
• High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
• Ring-Type Ti:sapphire Regenerative Amplifier with a Wide Tuning Range
• Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
• Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
• Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
• Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
• Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
• Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
• Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
• Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
• InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
• Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
• Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
• Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Room Temperature Nb-Based Single-Electron Transistors
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Room Temperature Nb-Based Single-Electron Transistors
• Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
• 1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
• Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
• Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
• Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
• Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
• Surface Observation and Modification of Si Substrate in Solutions
• Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
• Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
• Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
• Precise Mark Shape Control in Mark Length Recording on Magnetooptical Disk
• Read Channel and Format for High-Density Magneto-Optical Disk System
• pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
• Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
• Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
• Infrared Lattice Absorption in Wurtzite GaN
• High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
• Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
• 2 GB/130 mm Capacity Direct-Overwrite Magneto-Optical Disk
• Single Electron Memory at Romm Temperature: Experiment and Simulation
• Application of Domain Transfer to Magneto-optical Recording: Domain Stabilization during Readout
• Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
• Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
• Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAS) Grown on Si Emitters : Surfaces. Interfaces, and Films
• Modified EEPRML with 16/17 (3;11) MTR Code and Cyclic Redundancy Check Code for High Density Magnetic Recording Channels (Special Issue on Information Storage Technologies for the 21st Century)
• High Linear Density Recording of 0.3 μm Domain Length on Magneto-Optical Disk : DRIVE TECHNOLOGY II
• High Speed Overwritable Magneto-Optic Recording : DRIVE TECHNIQUE
• Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
• High Temperature Stable W-GaAs Schottky Barrier
• Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
• Spin Directions in Exchange-Coupled Rare-Earth Transition Metal Double Layer Films with In-Plane Magnetic Intermediate Layer
• Stacked Optical Disk Drive for Multimedia Files : Drive Technology
• Stacked Optical Disk Drive for Multimedia Files
• Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
• Computer-Controlled Mapping of Photoluminescence Intensities
• Focusing Servo Method Using the Autofocusing Effect due to Wavelength Change of Diode Lasers : COMPONENTS
• Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
• Characterization of Polyvinylchloride by Means of Sound Velocity and Longitudinal Modulus Measurements
• GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices

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