High Temperature Stable W-GaAs Schottky Barrier
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概要
- 論文の詳細を見る
The effect of annealing a W-GaAs (Se^+ implanted) Schottky diode at high temperatures was investigated. The diode showed an excellent stability against annealing. The ideal factor n and the barrier height φ_B of the diode stayed more or less constant at values of 1.1-1.2 and 0.73 V, respectively, for the temperature variation of 800℃-950℃. Using He^+ backscattering analysis, it was shown that the interdiffusion in W and GaAs couples takes place at 900℃.
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Tanoue Hisao
Electrotechnical Laboratory
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Hashizume Nobuo
Electrotechnical Laboratory
-
Kanayama Toshihiko
Electrotechnical Laboratory
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
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