Hot Implantation of Nitrogen Ions into GaAs_<1-x>P_x (x=0.36)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-03-05
著者
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MAKITA Yunosuke
Electrotechnical Laboratory
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GONDA Shun-ichi
Electrotechnical Laboratory
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Tanoue Hisao
Electrotechnical Laboratory
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Maekawa Shigeru
Electrotechnical Laboratory
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Maekawa Shigeru
Electronical Laboratory
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Tsurushima Toshio
Electrotechnical Laboratory
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Makita Yoji
Marine Resources and Environment Institute, National Institute of Advanced Industrial Science and Technology (AIST)
関連論文
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- Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate
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- The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates
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- Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams
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